Bogdan Dryzhakov is a postdoctoral researcher at Oak Ridge National Laboratory establishing material platforms for ferroelectric memory and quantum photonics. His research has focused on investigating and inducing multifunctional semiconductor qualities through the understanding of structure-property relationships. Previously, Bogdan’s research focused on developed on sensing devices for dual Gamma/Neutron detection and nanostructured battery fabrication.
Presentation Title:
Fabrication and Ion Processing Development of Aluminum Nitride Photonic Integrated Circuits
Presentation Abstract:
Relative to silicon photonics, aluminum nitride photonic integrated circuits offer a wide bandgap, tolerance to extreme environments, and second-order nonlinearity; although CMOS-compatible, AlN fabrication still faces pain points due to immature process design kits. We explore chlorine- and fluorine-based reactive-ion etch chemistries to achieve low sidewall roughness and propagation loss below 3 dB/cm, meeting the standard limit for on-chip quantum operations. Additionally, we utilize the radiation tolerance of AlN to irradiate functional ions (He+ and Er3+) that induce ferroelectricity and create color centers. Here, the >6 eV bandgap and intrinsic optical nonlinearity of AlN support on-chip light generation and conversion from the visible to telecom bands.